Paper
28 March 2000 Raman studies of the decay of the longitudinal optical phonons in wurtzite GaN and AlxGa1-xN
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Abstract
Decay of the longitudinal optical (LO) phonons in wurtzite GaN and AlxGa1-xN (x equals 0.1) has been studied by subpicosecond time-resolved Raman spectroscopy. In contrast to the usually-believed 2LA decay channel for LO phonons in other semiconductors, our experimental results show that, among the various possible decay channels, the LO phonons in wurtzite GaN and AlxGa1-xN (x equals 0.1) decay primarily into a large wavevector TO and a large wavevector LA or TA phonons. These experimental results are consistent with the recent theoretical calculations of the phonon dispersion curves.
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Kong-Thon F. Tsen, David K. Ferry, Stephen M. Goodnick, A. Salvador, and Hadis Morkoc "Raman studies of the decay of the longitudinal optical phonons in wurtzite GaN and AlxGa1-xN", Proc. SPIE 3940, Ultrafast Phenomena in Semiconductors IV, (28 March 2000); https://doi.org/10.1117/12.381468
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KEYWORDS
Phonons

Gallium nitride

Raman spectroscopy

Semiconductors

Pulsed laser operation

Wafer-level optics

Electrical engineering

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