Modeling of pnpn GaN and 6H-SiC thyristors

Hamid Z. Fardi

doi:10.1117/12.391412

14 July 2000 Modeling of pnpn GaN and 6H-SiC thyristors

Hamid Z. Fardi

Proceedings Volume 3944, Physics and Simulation of Optoelectronic Devices VIII; (2000) https://doi.org/10.1117/12.391412
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States

Abstract

We have developed a current controlled numerical model by solving the semiconductor device drift-diffusion equations in an isothermal condition to study the current-voltage characteristics of heterostructure GaN/6H-SiC pnpn thyristors. The temperature sensitive parameters such as the density of states, lifetime, mobility, and bandgap energy are included for the electrical characterization. The modeling work is aimed at designing four-layer pnpn thyristors using GaN, 6H- SiC, or combination of thereof, for high power high temperature switching applications. Preliminary simulated results show high power switching at high temperature.

Citation Download Citation

Hamid Z. Fardi "Modeling of pnpn GaN and 6H-SiC thyristors", Proc. SPIE 3944, Physics and Simulation of Optoelectronic Devices VIII, (14 July 2000); https://doi.org/10.1117/12.391412

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