Improving reticle yields with after develop inspection (ADI)

Franklin D. Kalk; Keith J. Brankner; Laurie Peters; Anthony Vacca; Scott Pomeroy; David Emery

doi:10.1117/12.377117

3 February 2000 Improving reticle yields with after develop inspection (ADI)

Franklin D. Kalk, Keith J. Brankner, Laurie Peters, Anthony Vacca, Scott Pomeroy, David Emery

Proceedings Volume 3996, 16th European Conference on Mask Technology for Integrated Circuits and Microcomponents; (2000) https://doi.org/10.1117/12.377117
Event: 16th European Conference on Mask Technology for Integrated Circuits and Microcomponents, 1999, Munich, Germany

Abstract

In this study, After Develop Inspection was used to inspect Cr photomasks incorporating iP3600 and ZEP7000 resists at several thicknesses. The detected defects were analyzed and compared to defects found after etch. A test mask with programmed defects was also created and tested to characterize the sensitivity of this new capability.

Citation Download Citation

Franklin D. Kalk, Keith J. Brankner, Laurie Peters, Anthony Vacca, Scott Pomeroy, and David Emery "Improving reticle yields with after develop inspection (ADI)", Proc. SPIE 3996, 16th European Conference on Mask Technology for Integrated Circuits and Microcomponents, (3 February 2000); https://doi.org/10.1117/12.377117

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