Control of resist heating effect

Hirohito Anze; Takayuki Abe; Hideaki Sakurai; Tomohiro Iijima; Yoshiaki Hattori; Noriaki Nakayamada; Takashi Kamikubo

doi:10.1117/12.390061

21 July 2000 Control of resist heating effect

Hirohito Anze, Takayuki Abe, Hideaki Sakurai, Tomohiro Iijima, Yoshiaki Hattori, Noriaki Nakayamada, Takashi Kamikubo

Author Affiliations +

Proceedings Volume 3997, Emerging Lithographic Technologies IV; (2000) https://doi.org/10.1117/12.390061
Event: Microlithography 2000, 2000, Santa Clara, CA, United States

Abstract

The electron beam (EB) writing system with high acceleration voltage must be used for the mask fabrication because of its fine resolution. In this case, the resist heating effect becomes one of the serious problems in CD control. This paper discusses the controllability of the resist heating effect and shows that; (1) The CD variation caused by the effect increases with higher pattern coverage and larger shot size, which supports qualitatively results of temperature simulation based on Ralf's model. (2) The multiple exposure is effective to suppress the temperature rise in a substrate and the CD variation. The shifting-type exposure is more effective than the non-shifting-type exposure for suppression of the effect. (4) The CD variation for ZEP7000 can be suppressed to less than 5.0 [nm] (range) provided the shot size is less than or equal to 1.0 [micrometer] and the shifting-type exposure is adopted. Thus, the resist heating effect can be controlled and the CD variation by the effect can be suppressed enough for fabricating the masks to produce 0.15 micrometer devices and beyond.

Citation Download Citation

Hirohito Anze, Takayuki Abe, Hideaki Sakurai, Tomohiro Iijima, Yoshiaki Hattori, Noriaki Nakayamada, and Takashi Kamikubo "Control of resist heating effect", Proc. SPIE 3997, Emerging Lithographic Technologies IV, (21 July 2000); https://doi.org/10.1117/12.390061

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