Paper
2 June 2000 Experiments in mask metrology using a CD AFM
Martin A. Klos, Sanjay K. Yedur
Author Affiliations +
Abstract
CD AFM (Critical Dimension Atomic Force Microscopy) offers a potential advantage in mask metrology not found in more common techniques: sidewall profiling. The uncertainty of CD width measurement can be reduced because the sidewall positions are found directly, instead of relying on an interpretation of brightness as with other methods. And, unlike with the other techniques, a thickness measurement is available. To demonstrate that this potential could be realized in a production environment, a real CD AFM tool was used to run CD long-term precision measurements on etched masks. Results indicate that a precision in width measurements of 3 nm at 3(sigma) can be achieved. Preliminary results for resist masks indicate that a similar performance is possible. Masks, as opposed to wafers, present additional complications for CD AFM. These problems and their solutions are discussed. Calibration techniques are also presented, as they are a crucial concern in metrology.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Martin A. Klos and Sanjay K. Yedur "Experiments in mask metrology using a CD AFM", Proc. SPIE 3998, Metrology, Inspection, and Process Control for Microlithography XIV, (2 June 2000); https://doi.org/10.1117/12.386491
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CITATIONS
Cited by 4 scholarly publications and 1 patent.
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KEYWORDS
Calibration

Critical dimension metrology

Photomasks

Atomic force microscopy

Metrology

Ions

Semiconducting wafers

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