Paper
23 June 2000 New bottom antireflection coating approach for KrF lithography at sub-150-nm design rule
Etsuko Iguchi, Hiroshi Komano, Toshimasa Nakayama
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Abstract
The major challenge for a new thin bottom anti-reflection coating (BARC) materials is how efficiently the light reflection can be reduced from the substrate. This becomes complex when the substrate involves transparent inter-layers such as the damascene process. The optimum refractive index (n) and extinction coefficient (k) for a new BARC were simulated with a commercially available software. We have successfully developed a new BARC, SWK-EX6, with other requirements such as high etch selectivity and gap filling capability considered. Lithographic performances were evaluated with a KrF exposure tool (NA 0.60, 2/3 annular illumination) for 150 nm line and space patterns.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Etsuko Iguchi, Hiroshi Komano, and Toshimasa Nakayama "New bottom antireflection coating approach for KrF lithography at sub-150-nm design rule", Proc. SPIE 3999, Advances in Resist Technology and Processing XVII, (23 June 2000); https://doi.org/10.1117/12.388337
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KEYWORDS
Reflection

Etching

Lithography

Reflectivity

Bottom antireflective coatings

Critical dimension metrology

Optical properties

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