CrOxFy as a material for attenuated phase-shift masks in ArF lithography

Keisuke Nakazawa; Takahiro Matsuo; Toshio Onodera; Hiroaki Morimoto; Hiroshi Mohri; Chiaki Hatsuta; Naoya Hayashi

doi:10.1117/12.392100

19 July 2000 CrOxFy as a material for attenuated phase-shift masks in ArF lithography

Keisuke Nakazawa, Takahiro Matsuo, Toshio Onodera, Hiroaki Morimoto, Hiroshi Mohri, Chiaki Hatsuta, Naoya Hayashi

Author Affiliations +

Proceedings Volume 4066, Photomask and Next-Generation Lithography Mask Technology VII; (2000) https://doi.org/10.1117/12.392100
Event: Photomask and Next Generation Lithography Mask Technology VII, 2000, Kanagawa, Japan

Abstract

We investigated the durability of CrO_xF_y film, which is used as a shifter for attenuated phase-shift masks (Att- PSMs), under ArF excimer laser irradiation. The phase shift of an as-deposited film decreased and the transmittance increased due to the disappearance of interfaces, which was caused by the migration of atoms. To improve durability, the sample was annealed at 300 degrees C to remove the interfaces, and the surface was etched to recover the decreased transmittance caused by the annealing. As a result, the lifetime became 1.5 years, which is sufficient for practical devices. The depth-of-focus of an ArF photoresist was 1.2 micrometers for a 0.13 micrometers line-and-space pattern and 0.5 micrometers for an 0.13 micrometers isolated contact- hole pattern when Att-PSMs made from CrO_xF_y film were used.

Citation Download Citation

Keisuke Nakazawa, Takahiro Matsuo, Toshio Onodera, Hiroaki Morimoto, Hiroshi Mohri, Chiaki Hatsuta, and Naoya Hayashi "CrOxFy as a material for attenuated phase-shift masks in ArF lithography", Proc. SPIE 4066, Photomask and Next-Generation Lithography Mask Technology VII, (19 July 2000); https://doi.org/10.1117/12.392100

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