Exchange interaction of 3D transition metal impurity with band electrons in diluted magnetic semiconductors

Tzuen Rong Yang; MiRa Kim

doi:10.1117/12.392110

11 July 2000 Exchange interaction of 3D transition metal impurity with band electrons in diluted magnetic semiconductors

Tzuen Rong Yang, MiRa Kim

Author Affiliations +

Proceedings Volume 4078, Optoelectronic Materials and Devices II; (2000) https://doi.org/10.1117/12.392110
Event: Photonics Taiwan, 2000, Taipei, Taiwan

Abstract

The effects of the exchange interaction between the localized d electrons of manganese ion and the delocalized host band electrons in II_1-xMn_xVI semiconductors are discussed based on the perturbation scheme and the k p theory as a function of the manganese composition. We observe that the exchange interaction lead to the red shift of the energy gap and it is shown that the many-body interaction due to exchange play an important role in accurate depiction of the energy gap with variation of the manganese amounts in diluted magnetic semiconductors. In addition, we have compared the results with experimental data of IR spectroscopy.

Citation Download Citation

Tzuen Rong Yang and MiRa Kim "Exchange interaction of 3D transition metal impurity with band electrons in diluted magnetic semiconductors", Proc. SPIE 4078, Optoelectronic Materials and Devices II, (11 July 2000); https://doi.org/10.1117/12.392110

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