Effect of background acceptor impurity on the radiative transition in low-dimensional InGaAs material

Xiaojun Wang; Fow-Sen Choa

doi:10.1117/12.406315

15 December 2000 Effect of background acceptor impurity on the radiative transition in low-dimensional InGaAs material

Xiaojun Wang, Fow-Sen Choa

Author Affiliations +

Proceedings Volume 4087, Applications of Photonic Technology 4; (2000) https://doi.org/10.1117/12.406315
Event: 2000 International Conference on Application of Photonic Technology (ICAPT 2000), 2000, Quebec City, Canada

Abstract

The e-AO FB radiative transition is investigated by the 10K PL measurements for the unintentionally doped MOCVD grown InGaAs. The intensity ratio of the e-AO FB transition to the BE exciton transition is found to be greatly larger in bulk material than that in the quantum well samples. In quantum well samples, this ratio is found to decrease rapidly as the well width decreases. A model is presented to calculate the oscillator strength of the e-AO recombination and the 1 1H excitonic recombination in quantum well, and this simulation can semi-quantitatively explain the experimental results.

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Xiaojun Wang and Fow-Sen Choa "Effect of background acceptor impurity on the radiative transition in low-dimensional InGaAs material", Proc. SPIE 4087, Applications of Photonic Technology 4, (15 December 2000); https://doi.org/10.1117/12.406315

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