The Anodic Oxide of Hg[sub]1-x[/sub]Cd[sub]x[/sub]Te: THe Composition And Reaction With The Substrate

G. D. Davis; S. P. Buchner; J . S. Ahearn; N. E . Byer

doi:10.1117/12.935734

30 November 1983 The Anodic Oxide of Hg_1-xCd_xTe: THe Composition And Reaction With The Substrate

G. D. Davis, S. P. Buchner, J . S. Ahearn, N. E . Byer

Proceedings Volume 0409, Technical Issues in Infrared Detectors and Arrays; (1983) https://doi.org/10.1117/12.935734
Event: 1983 Technical Symposium East, 1983, Arlington, United States

Abstract

The chemistry of the anodic oxide of Hg_l-xCd_xTe is reviewed. The oxide is generally believed to contain little Hg and primarily consist of CdTeO₃ with smaller amounts of HgTe0₃, CdTe20₅, HgTe20₅, or Te0₂. Consistent with the weakening Hg-Te bond strength for lower x value material, a severely defective interface between the oxide and the substrate is reported for Hg0_.8Cd_0.2Te, but not for Hg_0.7Cd_0.3Te. The detailed nature of these defects, however, remains open to debate. Models include a Hg-depleted layer in the semiconductor and an inhomogeneous oxide layer near the interface.

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G. D. Davis, S. P. Buchner, J . S. Ahearn, and N. E . Byer "The Anodic Oxide of Hg_1-xCd_xTe: THe Composition And Reaction With The Substrate", Proc. SPIE 0409, Technical Issues in Infrared Detectors and Arrays, (30 November 1983); https://doi.org/10.1117/12.935734

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