Development of polysilicon films for MEMS integration with submicrometer CMOS process

Brian L. McCarson; Benjamin Yip; Chris Reno; Jonathan Gorrell; Bishnu P. Gogoi

doi:10.1117/12.396463

25 August 2000 Development of polysilicon films for MEMS integration with submicrometer CMOS process

Brian L. McCarson, Benjamin Yip, Chris Reno, Jonathan Gorrell, Bishnu P. Gogoi

Proceedings Volume 4174, Micromachining and Microfabrication Process Technology VI; (2000) https://doi.org/10.1117/12.396463
Event: Micromachining and Microfabrication, 2000, Santa Clara, CA, United States

Abstract

Polysilicon is the most commonly used film for surface micromachined devices such as accelerometers, gyroscopes, and pressure sensors. In this study, the development of implanted polysilicon film s for surface micromachined devices is reported. These devices were developed for integration with a double level metal sub micrometers CMOS product line. For films with 5-30 k angstrom thickness, and residual stress, sheet resistance, deposition rate, and thickness uniformity were characterized as a function of deposition temperature, silane flow rate, implant dose, and anneal conditions.

Citation Download Citation

Brian L. McCarson, Benjamin Yip, Chris Reno, Jonathan Gorrell, and Bishnu P. Gogoi "Development of polysilicon films for MEMS integration with submicrometer CMOS process", Proc. SPIE 4174, Micromachining and Microfabrication Process Technology VI, (25 August 2000); https://doi.org/10.1117/12.396463

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