Effect of stress and dopant redistribution on trench-isolated narrow devices

Gregory S. Scott; Faran Nouri; Mark E. Rubin; Martin Manley; Peter Stolk

doi:10.1117/12.395728

18 August 2000 Effect of stress and dopant redistribution on trench-isolated narrow devices

Gregory S. Scott, Faran Nouri, Mark E. Rubin, Martin Manley, Peter Stolk

Proceedings Volume 4181, Challenges in Process Integration and Device Technology; (2000) https://doi.org/10.1117/12.395728
Event: Microelectronic Manufacturing, 2000, Santa Clara, CA, United States

Abstract

One of the challenges of scaling Shallow Trench Isolation (STI) is controlling the Vt and Idsat of narrow devices. In this paper, we show that Idsat of narrow devices is strongly affected by changes in mobility due to stress from the trench edge. We also show that Vt and leakage of narrow devices is controlled by dopant re-distribution in the channel caused by TED and boron segregation to the trench sidewalls.

Citation Download Citation

Gregory S. Scott, Faran Nouri, Mark E. Rubin, Martin Manley, and Peter Stolk "Effect of stress and dopant redistribution on trench-isolated narrow devices", Proc. SPIE 4181, Challenges in Process Integration and Device Technology, (18 August 2000); https://doi.org/10.1117/12.395728

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