Optical properties of epitaxial Sn-doped indium oxide films

B. Vengalis; R. Butkute; V. Lisauskas; A. Kindurys

doi:10.1117/12.417612

8 March 2001 Optical properties of epitaxial Sn-doped indium oxide films

B. Vengalis, R. Butkute, V. Lisauskas, A. Kindurys

Proceedings Volume 4318, Smart Optical Inorganic Structures and Devices; (2001) https://doi.org/10.1117/12.417612
Event: Advanced Optical Materials and Devices, 2000, Vilnius, United States

Abstract

Thin films of tin-doped indium oxide, In₂O₃:Sn (ITO), with 9 mol% Sn were grown heteroepitaxially at 600 degree(s)C by dc magnetron sputtering on (100)-faces of lattice-matched yttrium stabilized zirconia, ZrO₂:Y (YSZ). Carrier density ranging from about 10²⁶cm^-3 to 10²⁷m^-3 has been measured after film annealing at 200divided by750 degree(s)C in oxygen or vacuum. The lowest resistivity valued down to about 4.0(DOT)10^-6 (Omega) m (at 300 K) have been indicated for the vacuum-annealed films. Optical transmittance and reflectance spectra of the films were investigated at T = 85divided by300 K in the UV, visible and near IR spectra regions ((lambda) = 0.2divided by6.0 micrometers ). The transmittance spectra in the vicinity of the band-gap were modeled in terms of direct allowed transitions taking in to account both the gap widening (the Burstein-Moss effect) and narrowing due to electron-electron and electron-ion interaction. The band- gap E_g0, of 3.47 eV and 3.54 eV has been evaluated for non-doped material at T = 300 K and 85 K, respectively.

Citation Download Citation

B. Vengalis, R. Butkute, V. Lisauskas, and A. Kindurys "Optical properties of epitaxial Sn-doped indium oxide films", Proc. SPIE 4318, Smart Optical Inorganic Structures and Devices, (8 March 2001); https://doi.org/10.1117/12.417612

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