Application of top surface imaging process to 157-nm lithography

Isao Satou; Manabu Watanabe; Hiroyuki Watanabe; Toshiro Itani

doi:10.1117/12.436867

24 August 2001 Application of top surface imaging process to 157-nm lithography

Isao Satou, Manabu Watanabe, Hiroyuki Watanabe, Toshiro Itani

Proceedings Volume 4345, Advances in Resist Technology and Processing XVIII; (2001) https://doi.org/10.1117/12.436867
Event: 26th Annual International Symposium on Microlithography, 2001, Santa Clara, CA, United States

Abstract

A top surface imaging (TSI) process with a very thin imaging resist is one of the approaches for 100-nm or smaller pattern fabrication. We have been evaluating the different types of bilayer silylation processes for 193nm lithography, such as the bilayer silylation process without applying any wet-development and an improved bilayer silylation process that applies the vapor phase silylation treatment after alkaline wet-development of the top layer (SILYAL). We have been trying to apply these TSI processes to 157nm lithography and could successfully fabricate sub-100-nm fine resist patterns with high aspect ratios. We confirmed the lithographic high performance of these bilayer silylation processes and 157-nm lithography. In this paper, we describe the current status and progress in these silylation processes for 157nm lithography.

Citation Download Citation

Isao Satou, Manabu Watanabe, Hiroyuki Watanabe, and Toshiro Itani "Application of top surface imaging process to 157-nm lithography", Proc. SPIE 4345, Advances in Resist Technology and Processing XVIII, (24 August 2001); https://doi.org/10.1117/12.436867

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