Development of full-fill bottom antireflective coatings for dual-damascene process

Yubao Wang; Xiaoming Wu; Gu Xu; James E. Lamb III; John Sullivan; James B. Claypool; Jackie Backus; Sean Trautman; Xie Shao; Satoshi Takei; Yasuhisa Sone; Kenichi Mizusawa; Hiroyoshi Fukuro

doi:10.1117/12.436917

24 August 2001 Development of full-fill bottom antireflective coatings for dual-damascene process

Yubao Wang, Xiaoming Wu, Gu Xu, James E. Lamb III, John Sullivan, James B. Claypool, Jackie Backus, Sean Trautman, Xie Shao, Satoshi Takei, Yasuhisa Sone, Kenichi Mizusawa, Hiroyoshi Fukuro

Author Affiliations +

Proceedings Volume 4345, Advances in Resist Technology and Processing XVIII; (2001) https://doi.org/10.1117/12.436917
Event: 26th Annual International Symposium on Microlithography, 2001, Santa Clara, CA, United States

Abstract

Among the variety of dual damascene (DD) processes, the via- first approach has drawn much attention because of its reduced process steps and improved photolithography process window. The via-first process requires a layer of via-fill material to be applied beneath the photoresist layer. The primary function of this via-fill materials is to act as an etch-block at the base of the vias to prevent over-etching and punch-through of the bottom barrier layer during the trench-etch process. However, such materials also help to planarize the substrate and may limit back reflection from the substrate as well, helping to control the critical dimension (CD) of the printed features. Based on this understanding, our research efforts have been focused on the advancement of DD-applicable bottom antireflective coatings (BARCs). A series of novel planarizing DUV BARCs with full- via-fill properties and enhanced etching selectivity to resists have been developed. They showed good full-fill, void-free performance in 0.20micrometers vias having an aspect ratio of five, also sufficient top coverage i.e., enough coating thickness, low surface variation, and little thickness bias of isolated-via (1:10) area versus dense-via (1:1) area. The resist sidewall profiles with features sizes less than 0.20micrometers indicated that there was good compatibility of the BARCs with the resists. The thin film etching selectivity to commercial resists was about 1.2:1 under an Hbr/O₂ atmosphere. A study of the BARCs described in this report allows further discussion of the impact of pattern density, feature size, and processing conditions on BARC coating performance.

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Yubao Wang, Xiaoming Wu, Gu Xu, James E. Lamb III, John Sullivan, James B. Claypool, Jackie Backus, Sean Trautman, Xie Shao, Satoshi Takei, Yasuhisa Sone, Kenichi Mizusawa, and Hiroyoshi Fukuro "Development of full-fill bottom antireflective coatings for dual-damascene process", Proc. SPIE 4345, Advances in Resist Technology and Processing XVIII, (24 August 2001); https://doi.org/10.1117/12.436917

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