Picosecond Optoelectronic Switching In Lpe Grown Semi-Insulating Inp:Co

Kenneth Li; Edward Rezek; H. David Law

doi:10.1117/12.966081

28 November 1983 Picosecond Optoelectronic Switching In Lpe Grown Semi-Insulating Inp:Co

Kenneth Li, Edward Rezek, H. David Law

Proceedings Volume 0439, Picosecond Optoelectronics; (1983) https://doi.org/10.1117/12.966081
Event: 27th Annual Technical Symposium, 1983, San Diego, United States

Abstract

A picosecond optoelectronic switch based on a new material, LPE grown semi-insulating InP:Co, is described. Pulse response of < 75 ps has been measured. It is observed that these pulse widths depend on both the position of the light beam and the applied voltage. From these dependencies, it is found that the metallic contacts play an important role in the performance of the devices.

Citation Download Citation

Kenneth Li, Edward Rezek, and H. David Law "Picosecond Optoelectronic Switching In Lpe Grown Semi-Insulating Inp:Co", Proc. SPIE 0439, Picosecond Optoelectronics, (28 November 1983); https://doi.org/10.1117/12.966081

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