Comparison of simulation approaches for chemically amplified resists

Andreas Erdmann; Wolfgang Henke; Stewart A. Robertson; Ernst Richter; Bernd Tollkuehn; Wolfgang Hoppe

doi:10.1117/12.425196

26 April 2001 Comparison of simulation approaches for chemically amplified resists

Andreas Erdmann, Wolfgang Henke, Stewart A. Robertson, Ernst Richter, Bernd Tollkuehn, Wolfgang Hoppe

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Proceedings Volume 4404, Lithography for Semiconductor Manufacturing II; (2001) https://doi.org/10.1117/12.425196
Event: Microelectronic and MEMS Technologies, 2001, Edinburgh, United Kingdom

Abstract

Lithography simulators have become a standard tool in industrial and governmental research and development departments. IN contrast to the modeling approaches for the optical system and for the lithographic performance of i- line resists, there is still no consensus on the modeling of chemically amplified resist (CAR). Existing models differ in the description of the kinetics and the diffusion phenomena during post exposure bake and in the specification of the development rate. A modeling approach was established, that combines the light induced generation of photoacid, in- and out-diffusion of acid or base components, a generalized deprotection kinetics, Fickian and non-Fickian diffusion of resist components and an arbitrary development rate model. Existing models such as the effective acid model and a standard deprotection model for CAR can be considered as special cases of the implemented model. To evaluate the importance of certain options of the model and of the model parameters we have evaluated the performance of the model by comparing simulated CD data and resists profiles with experimental data.

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Andreas Erdmann, Wolfgang Henke, Stewart A. Robertson, Ernst Richter, Bernd Tollkuehn, and Wolfgang Hoppe "Comparison of simulation approaches for chemically amplified resists", Proc. SPIE 4404, Lithography for Semiconductor Manufacturing II, (26 April 2001); https://doi.org/10.1117/12.425196

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