Volatile defect formation and polysilicon residue elimination

Cheng-Fu Hsu

doi:10.1117/12.425248

20 April 2001 Volatile defect formation and polysilicon residue elimination

Cheng-Fu Hsu

Proceedings Volume 4405, Process and Equipment Control in Microelectronic Manufacturing II; (2001) https://doi.org/10.1117/12.425248
Event: Microelectronic and MEMS Technologies, 2001, Edinburgh, United Kingdom

Abstract

In the manufacture of integrated circuit device, it is necessary to maintain an ultra clean wafer surface in order to obtain high quality device. NH4OH-H2O2(APM), HCL- H2O2(HPM), and H2SO4-H2O2(SPM) are efficient in removing organic or metallic impurities, but these cleaning processes will leave the surface of wafers in a hydrophilic state due to the oxidizing nature of peroxide (H2O2). There are at least two problems associated with this fact. If the surface of the wafer is an un-densified tetraethoxysilane (TEOS) film, this film will absorb moisture hydrogen from the ambient or the wet cleaning process. Also, the hydrophilic surface could retain some impurities from the cleaning chemicals. The moisture and impurities will be converted into volatile defect and act as a mask during the subsequent polysilicon etching process and the polysilicon residue is resulted.

Citation Download Citation

Cheng-Fu Hsu "Volatile defect formation and polysilicon residue elimination", Proc. SPIE 4405, Process and Equipment Control in Microelectronic Manufacturing II, (20 April 2001); https://doi.org/10.1117/12.425248

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