CF4/O2 plasma simulation and comparison with quartz etch experiment

Han-Ming Wu; Long He; Jeff N. Farnsworth; Gang Liu

doi:10.1117/12.438386

5 September 2001 CF₄/O₂ plasma simulation and comparison with quartz etch experiment

Han-Ming Wu, Long He, Jeff N. Farnsworth, Gang Liu

Proceedings Volume 4409, Photomask and Next-Generation Lithography Mask Technology VIII; (2001) https://doi.org/10.1117/12.438386
Event: Photomask and Next Generation Lithography Mask Technology VIII, 2001, Kanagawa, Japan

Abstract

In order to study the behavior of fluorine based CF4/O2 plasma in an inductively coupled plasma (ICP) reactor, 2-D axisymmetric simulations are carried out by using Plasmator. The modeling results have provided the spatial distributions of some important plasma and neutral species in the dry etch process. It is found that the prevailing species of the plasma is CF3+ ion. The negative ion density has been proved not significant in the current process. To find the effects of mass flow rate and ICP power, three examples have been calculated. Based on the assumption of that the etch rate is proportional to the ion flux, the comparison between the simulation results and experimental data has been conducted. The results of the trend agree reasonably well. The model paves a way to find the direction of design optimization for plasma etch process experiments.

Citation Download Citation

Han-Ming Wu, Long He, Jeff N. Farnsworth, and Gang Liu "CF₄/O₂ plasma simulation and comparison with quartz etch experiment", Proc. SPIE 4409, Photomask and Next-Generation Lithography Mask Technology VIII, (5 September 2001); https://doi.org/10.1117/12.438386

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