Lattice stress gradients in zinc oxide thin films and their influence on the preferentially oriented growth of the films

Pavol Sutta

doi:10.1117/12.425445

17 April 2001 Lattice stress gradients in zinc oxide thin films and their influence on the preferentially oriented growth of the films

Pavol Sutta

Author Affiliations +

Proceedings Volume 4413, International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology; (2001) https://doi.org/10.1117/12.425445
Event: International Conference on Solid State Crystals 2000, 2000, Zakopane, Poland

Abstract

Stresses and strains are almost always present in thin films deposited on substrates. In the majority of cases they are residual stresses, introduced into the system during deposition or subsequent processing. The significant reasons of lattice stress (macrostress) formation in thin films are thermal and/or epitaxial mismatch between the thin film and substrate thermalcoefficients and lattice parameters. When using physical methods (as r.f. reactive sputtering) in order to prepare ZnO films, the compressive stresses arise as a consequence of ion bombardment with energies of tens or hundreds of electron volts by a process of atomic preening. If the deposition takes place under higher substrate temperature, the relaxation of residual stresses in the lower sublayers (close to the thin film - substrate interface) of thin film structure can occur so that the lattice stress gradient in thin film is created. The anisotropic nature of compressive stress in thin films supports the preferentially oriented growth of grains in polycrystalline thin films. A simple method to evaluate the lattice stress gradients in ZnO films by using X-ray diffraction analysis of asymmetric line profiles is presented.

Citation Download Citation

Pavol Sutta "Lattice stress gradients in zinc oxide thin films and their influence on the preferentially oriented growth of the films", Proc. SPIE 4413, International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (17 April 2001); https://doi.org/10.1117/12.425445

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