Performance analysis and development of high-temperature B-SiC/Si optoelectronic devices with porous silicon substrate

Jyh-Jier Ho; Yuen Keun Fang; Wen-Tse Hsieh; Chin-Ying Chen; Wei-Kuo Chia

doi:10.1117/12.427075

8 May 2001 Performance analysis and development of high-temperature β-SiC/Si optoelectronic devices with porous silicon substrate

Jyh-Jier Ho, Yuen Keun Fang, Wen-Tse Hsieh, Chin-Ying Chen, Wei-Kuo Chia

Author Affiliations +

Proceedings Volume 4416, Optical Engineering for Sensing and Nanotechnology (ICOSN 2001); (2001) https://doi.org/10.1117/12.427075
Event: Optical Engineering for Sensing and Nanotechnology (ICOSN '01), 2001, Yokohama, Japan

Abstract

In this paper, to suppress dark current of high temperature (beta) -SiC/Si optoelectronic device with a porous substrate has been studied. A pin structure was used to demonstrate the applicability. Experimental results show a twelve-fold improvement in optical gain at 200 degree(s)C operating temperature for the sample prepared on the porous silicon substrate as compared to the sample prepared on the silicon substrate, respectively. The improvement is attributed to the suppression of dark current by the high resistivity and flexibility of the porous substrate. A (beta) -SiC/Si optoelectronic device was fabricated both on porous silicon substrate and conventional silicon substrate, respectively. Experimental results show the optical current ratio can be improved up to 400% at room temperature and 3000% at 200 degree(s)C operating temperature, respectively, with the porous silicon substrate.

Citation Download Citation

Jyh-Jier Ho, Yuen Keun Fang, Wen-Tse Hsieh, Chin-Ying Chen, and Wei-Kuo Chia "Performance analysis and development of high-temperature β-SiC/Si optoelectronic devices with porous silicon substrate", Proc. SPIE 4416, Optical Engineering for Sensing and Nanotechnology (ICOSN 2001), (8 May 2001); https://doi.org/10.1117/12.427075

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