Paper
8 May 2001 Simple small-sized lock-in light detection system using a gated Si avalanche photodiode
Tsuyosh Miyata, Tetsuo Iwata, Tsutomu Araki
Author Affiliations +
Proceedings Volume 4416, Optical Engineering for Sensing and Nanotechnology (ICOSN 2001); (2001) https://doi.org/10.1117/12.426999
Event: Optical Engineering for Sensing and Nanotechnology (ICOSN '01), 2001, Yokohama, Japan
Abstract
We have constructed a simple small-sized lock-in light detection system using a gated Si avalanche photodiode (APD). The gate mode operation of the APD was achieved by a transistor-transistor-logic (TTL) signal superimposed on a direct current (dc) bias not exceeding the breakdown voltage of the APD. The attainable gain was thirty times larger than that obtained by the normal dc-biased APD. The APD is operated at a frequency of 2f (equals 20 kHz) and its output signal is fed into a compact laboratory-made lock-in amplifier that works in synchrony with the gated APD at a frequency f (equals 10 kHz). The system is useful for detecting a weak signal light superimposed on a large background.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tsuyosh Miyata, Tetsuo Iwata, and Tsutomu Araki "Simple small-sized lock-in light detection system using a gated Si avalanche photodiode", Proc. SPIE 4416, Optical Engineering for Sensing and Nanotechnology (ICOSN 2001), (8 May 2001); https://doi.org/10.1117/12.426999
Lens.org Logo
CITATIONS
Cited by 2 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Avalanche photodetectors

Signal detection

Amplifiers

Avalanche photodiodes

Light emitting diodes

Data transmission

Silicon

RELATED CONTENT


Back to Top