Temperature characteristics of silicon avalanche photodiodes

Iwona Wegrzecka; Maria Grynglas; Maciej Wegrzecki; Jan Bar; Remigiusz Grodecki

doi:10.1117/12.435922

8 August 2001 Temperature characteristics of silicon avalanche photodiodes

Iwona Wegrzecka, Maria Grynglas, Maciej Wegrzecki, Jan Bar, Remigiusz Grodecki

Proceedings Volume 4516, Optoelectronic and Electronic Sensors IV; (2001) https://doi.org/10.1117/12.435922
Event: Optoelectronic and Electronic Sensors IV, 2000, Gliwice, Poland

Abstract

The paper presents the results of studies on temperature dependence of such parameters as a dark current, noise current, gain, noise equivalent power and detectivity of silicon epiplanar avalanche photodiodes at the ITE. The photodiode reach-through structure is of an n^PLU-p-(pi) - p⁺ type with an under-contact ring and a channel stopper. The temperature range was stretching from -40 C to +40 C. Specially developed for this purpose an automatic system for low noise measurements was used. A two- stage micro-cooler with a Peltier's element was applied to control and stabilize the temperature of measured structures.

Citation Download Citation

Iwona Wegrzecka, Maria Grynglas, Maciej Wegrzecki, Jan Bar, and Remigiusz Grodecki "Temperature characteristics of silicon avalanche photodiodes", Proc. SPIE 4516, Optoelectronic and Electronic Sensors IV, (8 August 2001); https://doi.org/10.1117/12.435922

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