Paper
15 October 2001 Numerical modeling of a SiN beam resonant pressure sensor
Deyong Chen, Dafu Cui, Li Wang, Zhongyao Yu
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Proceedings Volume 4601, Micromachining and Microfabrication Process Technology and Devices; (2001) https://doi.org/10.1117/12.444702
Event: International Symposium on Optoelectonics and Microelectronics, 2001, Nanjing, China
Abstract
Numerical modeling of a SiN beam resonant pressure sensor is presented. The SiN beam is electrothermally excited and sensed by a piezoresistive thin film detector. In order to predict its exact performance and to optimize the design, the commercial FEA software is used to analyze the SiN beam resonant pressure sensor. Computer simulation is carried out on temperature distribution, resonant frequency shift due to thermal stress, effect of heater/detector elements on the natural resonance frequency, design of diaphragm geometry, and sensitivity of pressure measurement. The resonant pressure sensor has been fabricated using porous silicon sacrificial layer technology and measured both in vacuum and in air. There is a satisfactory agreement between computer simulation and experimental results.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Deyong Chen, Dafu Cui, Li Wang, and Zhongyao Yu "Numerical modeling of a SiN beam resonant pressure sensor", Proc. SPIE 4601, Micromachining and Microfabrication Process Technology and Devices, (15 October 2001); https://doi.org/10.1117/12.444702
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Cited by 2 scholarly publications.
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