Improved performance from InAlSb/InSb superlattice mid-infrared diode lasers

Tim Ashley; Alfred R. Adams; Peter Blood; Alexi D. Andreev; Theresa M. Burke; Eoin P. O'Reilly; Graham J. Pryce

doi:10.1117/12.470572

12 June 2002 Improved performance from InAlSb/InSb superlattice mid-infrared diode lasers

Tim Ashley, Alfred R. Adams, Peter Blood, Alexi D. Andreev, Theresa M. Burke, Eoin P. O'Reilly, Graham J. Pryce

Author Affiliations +

Proceedings Volume 4646, Physics and Simulation of Optoelectronic Devices X; (2002) https://doi.org/10.1117/12.470572
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States

Abstract

We report the growth by molecular beam epitaxy (MBE) of InAlSb/InSb superlattice structures to investigate their potential for reducing the Auger recombination and intervalence absorption effects, which currently limit the maximum operating temperature. The devices were all grown onto InSb(001) substrates and are not lattice matched. They are a psuedo double heterostructure, comprising an active region 3micrometers thick, consisting of 10 repeats of In_0.904Al_0.096Sb/InSb (10nm/6.5nm), surrounded by undoped layers of In_0.944Al_0.056Sb. Electrical confinement in the active region is by means of a 20nm thick wide gap In_0.794Al_0.206Sb barrier layer onto which a p type In_0.944Al_0.056Sb tunnel contact and highly doped n type In_0.944Al_0.056Sb region is grown, which together with a substrate highly doped n type In_0.944Al_0.056Sb region gives optical confinement, due to a Moss-Burstein shift of the refractive index. We have demonstrated laser operation up to 160K for devices ~1000micrometers long by 15micrometers wide. FTIR spectroscopy measurements revealed a lasing wavelength of 3.65micrometers at 80K. Under pulse bias conditions, the threshold current density was 320Acm^-2 at 80K. The peak output power was in excess of 800mW. Detailed modeling of the structures shows that greater strain is required in the system in order to quench Auger losses at higher temperatures.

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Tim Ashley, Alfred R. Adams, Peter Blood, Alexi D. Andreev, Theresa M. Burke, Eoin P. O'Reilly, and Graham J. Pryce "Improved performance from InAlSb/InSb superlattice mid-infrared diode lasers", Proc. SPIE 4646, Physics and Simulation of Optoelectronic Devices X, (12 June 2002); https://doi.org/10.1117/12.470572

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