Preparation of high-aspect-ratio 70-nm patterns by supercritical drying technique in proximity x-ray lithography

Yukiko Kikuchi; Takuya Fukuda; Seiichi Shishiguchi; Kaoru Masuda; Nobuyuki Kawakami

doi:10.1117/12.472268

1 July 2002 Preparation of high-aspect-ratio 70-nm patterns by supercritical drying technique in proximity x-ray lithography

Yukiko Kikuchi, Takuya Fukuda, Seiichi Shishiguchi, Kaoru Masuda, Nobuyuki Kawakami

Author Affiliations +

Proceedings Volume 4688, Emerging Lithographic Technologies VI; (2002) https://doi.org/10.1117/12.472268
Event: SPIE's 27th Annual International Symposium on Microlithography, 2002, Santa Clara, California, United States

Abstract

Supercritical drying (sc-drying) was applied for the photoresist (resist) patterns replicated by proximity x-ray lithography. By that technique, 70 nm L/S patterns with the aspect ratio of 5 were successfully obtained without pattern collapse for both solvent and aqueous development resists by ZEP and UV6, respectively. The procedure was that a puddle developed 8 inch wafer was rinsed 3 times successively without spin drying by changing rinse liquids, and the wafer wet with the 3rd rinse solution which is soluble in supercritical CO2 was transferred to a sc-drying chamber. The sc-drying process was performed with a condition of 8 MPa and 55 degrees C for about 15 min. The process uniformity within a wafer was examined by measuring the pattern width of 100 nm L/S with the resist UVII-HS and it was quite satisfactory. The feasibility study of dry etching with the sc-dried resist was performed. No noticeable change was found in etching ratio between with/without sc-dried resist. The composition change of resist was also investigated by thermal desorption spectroscopy (TDS) and by molecular weight dispersion measurement, and no change was found after sc-drying. The sc-drying technique has high potential to be accepted in semiconductor device manufacturing process.

Citation Download Citation

Yukiko Kikuchi, Takuya Fukuda, Seiichi Shishiguchi, Kaoru Masuda, and Nobuyuki Kawakami "Preparation of high-aspect-ratio 70-nm patterns by supercritical drying technique in proximity x-ray lithography", Proc. SPIE 4688, Emerging Lithographic Technologies VI, (1 July 2002); https://doi.org/10.1117/12.472268

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

;

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE