Paper
16 July 2002 Tip characterization for CD-AFM: getting to 2 nm, 3 sigma
Kirk Miller, Ami Chand, Greg Dahlen, Bradley Todd
Author Affiliations +
Abstract
We present nanometer-scale physical structures and analysis algorithms for characterizing tip width and shape for critical dimension atomic force microscopy (CD-AFM). Automated CD-AFM measurements will be used in future generation, and a robust methodology is demonstrated for ensuring long-term repeatability of width measurements on sub-100 nm structures. Structures are designed and chosen for their width uniformity on the sub-nm scale, as well as for their well defined shapes that can be deconvolved from the scan data to yield a precise image of the tip. We apply our tip characterization techniques to measurements of photoresist linewidth, contact etch and poly Si gate width in a manufacturing environment, and show that tool performance and characterization strategy can combine to give excellent long-term repeatability.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kirk Miller, Ami Chand, Greg Dahlen, and Bradley Todd "Tip characterization for CD-AFM: getting to 2 nm, 3 sigma", Proc. SPIE 4689, Metrology, Inspection, and Process Control for Microlithography XVI, (16 July 2002); https://doi.org/10.1117/12.473412
Lens.org Logo
CITATIONS
Cited by 3 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Data modeling

Critical dimension metrology

Semiconducting wafers

Etching

Metrology

Atomic force microscopy

Calibration

RELATED CONTENT


Back to Top