70-nm contact hole pattern with shrink technology

Lin-Hung Shiu

doi:10.1117/12.474267

24 July 2002 70-nm contact hole pattern with shrink technology

Lin-Hung Shiu

Proceedings Volume 4690, Advances in Resist Technology and Processing XIX; (2002) https://doi.org/10.1117/12.474267
Event: SPIE's 27th Annual International Symposium on Microlithography, 2002, Santa Clara, California, United States

Abstract

The present paper demonstrates the applicability of thermal flow resist to print sub-0.1micrometers contact holes using 248nm lithography. With the thermal flow resist, 200nm contact holes were defined by KrF lithography system. Then following one step thermal flow resulted in down to 70nm contact holes with vertical sidewall profile. The main feature of the thermal flow resist is one step process having the linear dependency of flow rate on baking temperature. As the results, thermal flow resists pattern shrinkage controlled by post development baking temperature. Resist flowing occurred post development temperature was higher than Tg. Baking temperature was not the dominant factor from the contact hole shrinkage size curve. The thermal flow process using the thermal flow resist is a promising candidate for the fabrication of gigabit devices.

Citation Download Citation

Lin-Hung Shiu "70-nm contact hole pattern with shrink technology", Proc. SPIE 4690, Advances in Resist Technology and Processing XIX, (24 July 2002); https://doi.org/10.1117/12.474267

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