Application of lithography simulation in reticle inspection

Christian K. Kalus; Robert Wildfeuer

doi:10.1117/12.479362

16 August 2002 Application of lithography simulation in reticle inspection

Proceedings Volume 4764, 18th European Conference on Mask Technology for Integrated Circuits and Microcomponents; (2002) https://doi.org/10.1117/12.479362
Event: 18th European Mask Conference on Mask Technology for Integrated Circuits and Micro-Components, 2002, Munich-Unterhaching, Germany

Abstract

Optical lithography simulation plays a decisive role in the development of technology for the manufacturing process of semiconductor devices. Its role in reticle inspection has only recently gained more attention. Filters determining which defects need repair and which ones can be ignored help set up the filter classes in inspection systems. These calculations are performed offline. In an effort to increase the accuracy of inspection it would be desirable to place the decision level as close to the actual process as possible. Therefore, an inspection system based on aerial images is a step in this direction. In addition, an optical simulator calculates from the aerial image the resist image. To do so very fast resist image models are needed (see figure 7). Quick models so far were restricted by accuracy and speed. In this paper a new very fast model will be presented that allows calculation of large areas suitable for inspection purposes. Finally a 'virtual inspection' system will be presented pinpointing at weak spots in the layout. In an effort to calculate larger areas of the resist in less time we had to take completely new approaches. They led us to analytical descriptions of the image transfer into the resist. Within these descriptions we begin in this first paper to investigate an approach based on the propagation of a top aerial image into the resist. The aerial image may come from calculations, as in the present article, or as well from measurements. The purpose of this article is to demonstrate the performance of the Fast Resist Model with respect to accuracy and time consumption. The limits of the current model are equally described.

Citation Download Citation

Christian K. Kalus and Robert Wildfeuer "Application of lithography simulation in reticle inspection", Proc. SPIE 4764, 18th European Conference on Mask Technology for Integrated Circuits and Microcomponents, (16 August 2002); https://doi.org/10.1117/12.479362

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
9 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Inspection

Reticles

Cadmium

Thin films

Lithography

3D modeling

Optical lithography

Show All Keywords

Keywords/Phrases

Search In:

Publication Years