Preparation of semi-insulating CdTe by post-growth annealing

Roman Grill; Ivan Turkevych; Jan Franc; Pavel Hoeschl; Eduard Belas; Pavel Moravec

doi:10.1117/12.450824

10 January 2003 Preparation of semi-insulating CdTe by post-growth annealing

Roman Grill, Ivan Turkevych, Jan Franc, Pavel Hoeschl, Eduard Belas, Pavel Moravec

Author Affiliations +

Proceedings Volume 4784, X-Ray and Gamma-Ray Detectors and Applications IV; (2003) https://doi.org/10.1117/12.450824
Event: International Symposium on Optical Science and Technology, 2002, Seattle, WA, United States

Abstract

Thermodynamic conditions for a post growth annealing to prepare near stoichiometric semi-insulating (SI) of CdTe with a minimized concentration of point defects are looked for in undoped and Sn-doped single crystals. The high temperature (200-1000°C) in-situ conductivity σ and Hall effect measurements are used to control the native defect density and to find out the Cd pressure P_Cd at which shallow defects are compensated. We show, that contrary to the undoped samples, where the change of the type of conductivity by variations of P_Cd is easy, the Sn-doped samples exhibit due to the Sn self-compensation much more stable behavior. The temperature near 500°C is reported to be optimum for the real-time annealing of bulk samples. The chemical diffusion is sufficiently fast at this temperature, simultaneously the lower temperature is preferred because the native defect density can be tuned gently by changing P_Cd. The measurement of temperature dependencies of σ in annealed samples below 500°C is used to establish the position of Fermi level and to characterize the structure of both shallow and deep levels detected in the sample. The quasichemical formalism is used for evaluation of defect density and for analysis of nature of deep levels.

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Roman Grill, Ivan Turkevych, Jan Franc, Pavel Hoeschl, Eduard Belas, and Pavel Moravec "Preparation of semi-insulating CdTe by post-growth annealing", Proc. SPIE 4784, X-Ray and Gamma-Ray Detectors and Applications IV, (10 January 2003); https://doi.org/10.1117/12.450824

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