Progress in far-infrared detection technology

Yongdong Zhou; Charles R. Becker; Renganathan Ashokan; Yusuf Selamet; Yong Chang; Rita T. Boreiko; Albert L. Betz; Sivalingam Sivananthan

doi:10.1117/12.452270

5 December 2002 Progress in far-infrared detection technology

Yongdong Zhou, Charles R. Becker, Renganathan Ashokan, Yusuf Selamet, Yong Chang, Rita T. Boreiko, Albert L. Betz, Sivalingam Sivananthan

Author Affiliations +

Proceedings Volume 4795, Materials for Infrared Detectors II; (2002) https://doi.org/10.1117/12.452270
Event: International Symposium on Optical Science and Technology, 2002, Seattle, WA, United States

Abstract

II-VI intrinsic very long wavelength infrared (VLWIR, λ_c~20 to 50 μm) materials, HgCdTe alloys as well as HgCdTe/CdTe superlattices, were grown by molecular beam epitaxy (MBE). The layers were characterized by means of X-ray diffraction, conventional Fourier transform infrared spectroscopy, Hall effect measurements and transmittance electron microscopy (TEM). Photoconductor devices were processed and their spectral response was also measured to demonstrate their applicability in the VLWIR region.

Citation Download Citation

Yongdong Zhou, Charles R. Becker, Renganathan Ashokan, Yusuf Selamet, Yong Chang, Rita T. Boreiko, Albert L. Betz, and Sivalingam Sivananthan "Progress in far-infrared detection technology", Proc. SPIE 4795, Materials for Infrared Detectors II, (5 December 2002); https://doi.org/10.1117/12.452270

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