Lithographic performance of an ASML i-line step-and-repeat system by using photosensitive Durimides

Rudy J. M. Pellens; Angelique van Klaveren; Rutger Voets; Jean-Paul van den Heuvel; Sylvain Misat; Pamela J. Waterson; Laurie J. Peterson D.V.M.

doi:10.1117/12.471974

25 March 2003 Lithographic performance of an ASML i-line step-and-repeat system by using photosensitive Durimides

Rudy J. M. Pellens, Angelique van Klaveren, Rutger Voets, Jean-Paul van den Heuvel, Sylvain Misat, Pamela J. Waterson, Laurie J. Peterson D.V.M.

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Proceedings Volume 4945, MEMS/MOEMS: Advances in Photonic Communications, Sensing, Metrology, Packaging and Assembly; (2003) https://doi.org/10.1117/12.471974
Event: Photonics Fabrication Europe, 2002, Bruges, Belgium

Abstract

Fabrication processes of microdevices and integrated microsystems are indispensable for the development of Micro-Electro-Mechanical Systems (MEMS). Reduction lithography becomes an important step in many new applications requiring ultra thick photolayers, large Critical Dimensions (CD) and tight control limits. For this market segment, the ASML SA 5200 reduction step-and-repeat system is a cost-effective tool for the manufacture of advanced microelectronics, MEMS, and Integrated Circuits (ICs). Along with this trend, manufacturing and development engineers, in order to better predict process interactions and better estimate process manufacturing, increasingly utilize modeling and numerical simulations. This paper discusses the simulated and experimental lithographic performance of an i-line step-and-repeat system by using photosensitive Durimides^TM a photopolymer developed and commercialized by Arch Chemicals. These photopolymers are negative acting self-priming Polyimide precursors with a high photosensitivity, which provide thick layer exposure solutions with a wide process window. The excellent adhesion of Durimide^TM films makes these materials suitable for MEMS, buffer-coat, and packaging applications. The range of film thicknesses used is from 6 μm up to 80 μm. Process windows for the different thicknesses are investigated and discussed in terms of Exposure Latitude (EL), Depth Of Focus (DOF), and Size linearity. The lithography simulator PROLITH/2 with thick resist option has been used for all modeling activities in this work. Also, an extensive comparison is made between simulated and experimental data.

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Rudy J. M. Pellens, Angelique van Klaveren, Rutger Voets, Jean-Paul van den Heuvel, Sylvain Misat, Pamela J. Waterson, and Laurie J. Peterson D.V.M. "Lithographic performance of an ASML i-line step-and-repeat system by using photosensitive Durimides", Proc. SPIE 4945, MEMS/MOEMS: Advances in Photonic Communications, Sensing, Metrology, Packaging and Assembly, (25 March 2003); https://doi.org/10.1117/12.471974

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KEYWORDS

Microelectromechanical systems

Lithography

Semiconducting wafers

Manufacturing

Packaging

Calibration

Photoresist materials

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