New process to fabricate DXRL x-ray mask by direct pattern writing

Zhong Geng Ling; Kun Lian; Shirong Wen

doi:10.1117/12.478253

15 January 2003 New process to fabricate DXRL x-ray mask by direct pattern writing

Zhong Geng Ling, Kun Lian, Shirong Wen

Proceedings Volume 4979, Micromachining and Microfabrication Process Technology VIII; (2003) https://doi.org/10.1117/12.478253
Event: Micromachining and Microfabrication, 2003, San Jose, CA, United States

Abstract

The normal process to fabricate an x-ray mask involves two steps: make an optical mask by using an optical pattern generator (OPG), and form the pattern on the x-ray mask membrane with the optical mask by UV lithography. The sole function of the optical mask is the pattern transfer from source to target. It is always possible that pattern distortion would happen during its transference. In this paper we present a new process to fabricate deep x-ray lithography (DXRL) mask by direct pattern writing on the first layer of resist of an x-ray mask membrane. A thin layer of gold (1 ~ 2 μm) is deposited on the revealed plating base of the membrane and serves as the absorber for a following x- ray exposure of the second (thicker) layer of resist. Finally a thick (5-10 μm) gold layer is plated in the stencil formed by developed second layer of resist. This process has been demonstrated with Kapton membranes (Polyimide foil). The principle of the process can be applied to other x-ray mask membrane materials and to make ultra deep x-ray lithography (UDXRL) mask as well. In this paper the initial results of the new process are presented. The performance of the fabricated mask is evaluated and the alternative approaches will be discussed.

Citation Download Citation

Zhong Geng Ling, Kun Lian, and Shirong Wen "New process to fabricate DXRL x-ray mask by direct pattern writing", Proc. SPIE 4979, Micromachining and Microfabrication Process Technology VIII, (15 January 2003); https://doi.org/10.1117/12.478253

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