Aluminum nanodot array formed by anodic oxidation and its conduction properties

Shoso Shingubara; Yusuhiko Murakami; Hiroyuki Sakaue; Takayuki Takahagi

doi:10.1117/12.479609

1 July 2003 Aluminum nanodot array formed by anodic oxidation and its conduction properties

Shoso Shingubara, Yusuhiko Murakami, Hiroyuki Sakaue, Takayuki Takahagi

Proceedings Volume 4999, Quantum Sensing: Evolution and Revolution from Past to Future; (2003) https://doi.org/10.1117/12.479609
Event: Integrated Optoelectronics Devices, 2003, San Jose, CA, United States

Abstract

Self-organized nanohole array formed by anodic oxidation of aluminum has been intensively studied to use them as molds to form nano wires or dots. Recently we established a formation of porous alumina film on solid substrates such as Si, and found a formation of ordered aluminum hexagonal dot array after finishing of anodic oxidation on a SiO₂/Si substrate. However, the size and the geometrical arrangement of well-ordered nanoholes are limited by a narrow window of self-organization condition of anodic oxidation. We investigated AFM nano-indentation to control the initial position of nanoholes during anodic oxidation, in order to realize nano-holes and Al dots with desired sizes and densities. Arrays of nanoholes with a nearest neighbor distance from 50 to 120 nm were successfully formed. Al dot teragonal arrays were formed after selective wet chemical etching of porous alumna film. Electron transport through Al nanodot array with an adequate inter-dot distance exhibited a clear Coulomb blockade at liquid He temperature.

Citation Download Citation

Shoso Shingubara, Yusuhiko Murakami, Hiroyuki Sakaue, and Takayuki Takahagi "Aluminum nanodot array formed by anodic oxidation and its conduction properties", Proc. SPIE 4999, Quantum Sensing: Evolution and Revolution from Past to Future, (1 July 2003); https://doi.org/10.1117/12.479609

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