Paper
2 June 2003 Method for rapid screening of photoresist strippers for acceptance in DUV lithographic areas
Author Affiliations +
Abstract
Airborne contaminants have been shown to cause image degradation to acid-catalyzed chemcially amplified resists at low concentrations. In addition to mitigation measures, choices can be made to remove resist strippers from the DUV fab and eliminate those known to poison the resist. Such choices can be made based on the evaporative alkalinity of the stripper. A method has been developed as a rapid technique for testing the ariborne alkalinity strength of various resist strippers. This screening technique provides rapid information at minimal cost to qualify safe chemical strippers for the DUV fab. Experimental results on resist strippers to include commoditites such as isopropanol, a cyclic ketone, amide, and specialty blends that contain amines as well as a high performance product, GenSolve.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
John C. Moore and Shankar C. Acharya "Method for rapid screening of photoresist strippers for acceptance in DUV lithographic areas", Proc. SPIE 5038, Metrology, Inspection, and Process Control for Microlithography XVII, (2 June 2003); https://doi.org/10.1117/12.488118
Lens.org Logo
CITATIONS
Cited by 1 scholarly publication.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Deep ultraviolet

FT-IR spectroscopy

Photoresist materials

Chemistry

Photoresist processing

Lithography

Catalysis

Back to Top