Dependence of outgassing characters and total amount of outgassed species at 157-nm exposure on the structures of resist base polymer

Yoshinori Matsui; Satoshi Umeda; Shiro Matsui; Shu Seki; Seiichi Tagawa; Seiichi Ishikawa; Toshiro Itani

doi:10.1117/12.485200

12 June 2003 Dependence of outgassing characters and total amount of outgassed species at 157-nm exposure on the structures of resist base polymer

Yoshinori Matsui, Satoshi Umeda, Shiro Matsui, Shu Seki, Seiichi Tagawa, Seiichi Ishikawa, Toshiro Itani

Author Affiliations +

Proceedings Volume 5039, Advances in Resist Technology and Processing XX; (2003) https://doi.org/10.1117/12.485200
Event: Microlithography 2003, 2003, Santa Clara, California, United States

Abstract

We directly measured mass spectra and change in mass spectral intensity as a function of time for outgassed species from fluoropolymers and fluorine-containing resists during 157 nm exposure using quadrupole mass spectrometer at pressure about 4×10^-7 Torr, in order to investigate dependence of outgassing characters on the structure of resist base polymers. We also investigated pressure increase resulting from outgassed species from 157-nm-irradiated fluoropolymers and their resists. The information obtained is as follows: (1) Side-chain-fluorinated polymers produce fluorine-containing outgassed species via scission of side chain. (2) Some fluoropolymers produce HF during 157 nm exposure. Fluorine is suggested to easily dissociate and react with hydrogen to form HF in the exposure of copolymer of tetrafluoroethylene and tert-butyl α-fluoroacrylate. (3) Outgassed species related to deprotection of blocking group originate from some acetal resists during and after exposure at room temperature, although the species were observed only during exposure in the exposure of corresponding base polymer. (5) Regarding base polymers and their resists employed, pressure increase in vacuum chamber becomes smaller in the next order, base polymers with ester groups in their side chains, base polymers having side chains other than ester groups, base polymers without side chains.

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Yoshinori Matsui, Satoshi Umeda, Shiro Matsui, Shu Seki, Seiichi Tagawa, Seiichi Ishikawa, and Toshiro Itani "Dependence of outgassing characters and total amount of outgassed species at 157-nm exposure on the structures of resist base polymer", Proc. SPIE 5039, Advances in Resist Technology and Processing XX, (12 June 2003); https://doi.org/10.1117/12.485200

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