Defect structure and diffusion of defects in narrow-gap Hg1-xCdxTe crystals

V. V. Bogoboyashchyy

doi:10.1117/12.502286

14 April 2003 Defect structure and diffusion of defects in narrow-gap Hg_1-xCd_xTe crystals

V. V. Bogoboyashchyy

Author Affiliations +

Proceedings Volume 5065, Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics; (2003) https://doi.org/10.1117/12.502286
Event: Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics, 2002, Kiev, Ukraine

Abstract

Formation and diffusion of native point defects mercury vacancies and interstitials in Hg_1-xCd_xTe crystals (x approximately 0.2...0.3) are investigated by optical and galvanomagnetic methods. The reaction constant for the reaction of neutral vacancy formation Hg(L) + V_Hg^x 0 in Hg-saturated Hg_1-xCd_xTe crystals is determined in the temperature range 200...600°C. It is equal to (formula abailable in paper). Then defect diagrams for equilibrated mercury vacancies in Hg_1-x Cd_xTe crystals of x = 0.215 and x = 0.295 are calculated. The results of calculations have coincided with the data of experiment. Concentration of equilibrated mercury interstitials Hg_I is estimated by studying mercury thermal diffusion in heterogeneous Te-saturated Hg_1-xCd_xTe crystals of x = 0.215 and x = 0.295. The reaction constant for the interstitial formation reaction Hg(L) yeilds Hg_I + 2e' is found for Hg-saturated conditions. It is equal to (formula available in paper) exp (-0.94 eV/k_BT)cm^-3 for x = 0.215 (formula available in paper). Basing on this data the reaction constant K_F" for Frenkel's reaction Hg_I" + V_Hg" mutually implies 0 have been also obtained: K_F" = 4.66•10⁴⁶ exp (-2.26 eV/k_BT) cm^-6 for x = 0.215 and K_F = 3.82•10⁴⁵ exp (-2.19 eV/k_BT) cm_-6 for x = 0.295. Then total concentration of equilibrated mercury vacancies and interstitials in Hg _0.8Cd _0.2Te crystals have been calculated for Hg-saturated and Te-saturated annealing conditions in the temperature range from 0°C up to a melting point.

Citation Download Citation

V. V. Bogoboyashchyy "Defect structure and diffusion of defects in narrow-gap Hg_1-xCd_xTe crystals", Proc. SPIE 5065, Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (14 April 2003); https://doi.org/10.1117/12.502286

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