EUV mask simulation for AIMS

Roman Windpassinger; Norbert Rosenkranz; Thomas Scherubl; Peter Evanschitzky; Andreas Erdmann; Axel Zibold

doi:10.1117/12.518053

17 December 2003 EUV mask simulation for AIMS

Roman Windpassinger, Norbert Rosenkranz, Thomas Scherubl, Peter Evanschitzky, Andreas Erdmann, Axel Zibold

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Proceedings Volume 5256, 23rd Annual BACUS Symposium on Photomask Technology; (2003) https://doi.org/10.1117/12.518053
Event: Photomask Technology, 2003, Monterey, California, United States

Abstract

The objective of this paper is to assess how variations of the chief ray angle of the illumination light incident on an EUV multilayer mask as well as the light bandwidth affect the performance of an AIMS EUV tool with respect to CD measurement and defect evaluation. To this end EUV images were simulated with an EUV lithography simulator developed by the Fraunhofer Institute IISB. The simulations were performed for a multilayer mask with a buried defect under an isolated line. The specifics of the AIMS EUV were taken into account by a superposition of aerial images obtained for different wavelengths. The presentation discusses the simulations and their results.

Citation Download Citation

Roman Windpassinger, Norbert Rosenkranz, Thomas Scherubl, Peter Evanschitzky, Andreas Erdmann, and Axel Zibold "EUV mask simulation for AIMS", Proc. SPIE 5256, 23rd Annual BACUS Symposium on Photomask Technology, (17 December 2003); https://doi.org/10.1117/12.518053

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