Paper
12 May 2004 Optimization design and fabrication of photonic crystal waveguides based on SOI using 248-nm deep-UV lithography
Author Affiliations +
Proceedings Volume 5280, Materials, Active Devices, and Optical Amplifiers; (2004) https://doi.org/10.1117/12.520153
Event: Asia-Pacific Optical and Wireless Communications, 2003, Wuhan, China
Abstract
In this work, methods of design and fabrication of photonic bandgap structures (PBG) and photonic crystal waveguides based on SOI (silicon on insulator) are presented. In theory, a method that incorporates the plane wave expansion (PWE) method based on supercell with the finite-difference time-domain (FDTD) method with a perfectly matched layer (PML) boundary condition has been investigated. At first, PWE simulation will present a band structure. Then according to the band structure, FDTD tool can simulate a light propagation and can obtain optimized parameters easily. With the method, several photonic crystal devices suitable for 248nm Deep UV lithography and 0.18um ion-beam etching are designed and fabricated.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Lingyun Xie, Yejin Zhang, Xiaozhou Peng, and Shizhong Xie "Optimization design and fabrication of photonic crystal waveguides based on SOI using 248-nm deep-UV lithography", Proc. SPIE 5280, Materials, Active Devices, and Optical Amplifiers, (12 May 2004); https://doi.org/10.1117/12.520153
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Cited by 10 patents.
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KEYWORDS
Photonic crystals

Waveguides

Lithography

Finite-difference time-domain method

Silicon

Deep ultraviolet

Dielectrics

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