Design and optimization of high-performance 1.3-µm VCSELs

Joachim Piprek; Manish Mehta; Vijaysekhar Jayaraman

doi:10.1117/12.543062

18 June 2004 Design and optimization of high-performance 1.3-μm VCSELs

Joachim Piprek, Manish Mehta, Vijaysekhar Jayaraman

Author Affiliations +

Proceedings Volume 5349, Physics and Simulation of Optoelectronic Devices XII; (2004) https://doi.org/10.1117/12.543062
Event: Integrated Optoelectronic Devices 2004, 2004, San Jose, CA, United States

Abstract

This paper discusses the design and the internal device physics of novel high-performance vertical-cavity surface-emitting lasers (VCSELs) emitting at 1.32 µm wavelength. Our VCSEL design features intra-cavity ring contacts, strain-compensated AlGaInAs quantum wells, and an AlInAs/InP tunnel junction. The tunnel junction is laterally confined forming an aperture for current injection and wave guiding. Undoped AlGaAs/GaAs mirrors are bonded on both sides to the InP-based active region. These devices have recently demonstrated continuous-wave (CW) lasing at stage temperatures up to 134°C, the highest temperature reported thus far for any long-wavelength VCSEL. In order to increase the single mode output power at high temperatures, we simulate, analyze, and optimize our VCSEL using advanced numerical software tools. The two-dimensional model self-consistently combines electrical, optical, thermal and gain calculations. It gives good agreement with measurements after careful calibration of material parameters. Design optimization promises single mode output power of 2mW in CW operation at 80°C ambient temperature.

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Joachim Piprek, Manish Mehta, and Vijaysekhar Jayaraman "Design and optimization of high-performance 1.3-μm VCSELs", Proc. SPIE 5349, Physics and Simulation of Optoelectronic Devices XII, (18 June 2004); https://doi.org/10.1117/12.543062

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