Optoelectronic multiplexer realization by a GaAs/Si heterostructure formed by pulsed-laser deposition

Bruno Ullrich; Artur Erlacher; Timofey G. Gerasimov; Elena Y. Komarova; Herbert Jaeger

doi:10.1117/12.528544

6 July 2004 Optoelectronic multiplexer realization by a GaAs/Si heterostructure formed by pulsed-laser deposition

Bruno Ullrich, Artur Erlacher, Timofey G. Gerasimov, Elena Y. Komarova, Herbert Jaeger

Proceedings Volume 5359, Quantum Sensing and Nanophotonic Devices; (2004) https://doi.org/10.1117/12.528544
Event: Integrated Optoelectronic Devices 2004, 2004, San Jose, CA, United States

Abstract

We formed p-GaAs/n-Si and n-GaAs/p-Si heterostructures by depositing thin-film GaAs on Si wafers with pulsed-laser deposition (PLD). For the GaAs ablation, the 532 nm emission of a Nd:YAG laser (10 Hz, 6 ns) with a fluence of 0.79-0.84 J/cm² was used. The thicknesses of the films were approximately 0.5 μm. During the deposition, the substrate was not heated and the ambient pressure was kept at 10^-6 torr. X-ray analysis showed that the films contain crystallites and by means of an atomic force microscope (AFM), it is demonstrated that the film surfaces are fairly smooth. Using a monochromatic light source and by means of electrical contacts on the top and the rear of the sample, we measured the photocurrent through the junction using lock-in technique. These measurements showed that the photocurrent spectra of the p-GaAs/n-Si diode crucially depend on the applied bias. At -0.7 V (reverse bias) the photocurrent maximum is at 930 nm, while at +0.5 V, the photocurrent maximum lies at 1056 nm. These maxima are in the vicinity to the bandgap of GaAs and Si, respectively. In other words, it is possible to switch between the spectral sensitivity of GaAs and Si via an applied electric field. The device can be either used as a photo-detector for which the sensitive wavelength range can be easily chosen by the applied bias or as hybrid multiplexer to convert two optical inputs into one electrical output.

Citation Download Citation

Bruno Ullrich, Artur Erlacher, Timofey G. Gerasimov, Elena Y. Komarova, and Herbert Jaeger "Optoelectronic multiplexer realization by a GaAs/Si heterostructure formed by pulsed-laser deposition", Proc. SPIE 5359, Quantum Sensing and Nanophotonic Devices, (6 July 2004); https://doi.org/10.1117/12.528544

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available