X-Ray Mask Technology

A. R. Shimkunas; S. A. Harrell

doi:10.1117/12.947503

20 June 1985 X-Ray Mask Technology

A. R. Shimkunas, S. A. Harrell

Proceedings Volume 0537, Electron-Beam, X-Ray, and Ion-Beam Techniques for Submicrometer Lithographies IV; (1985) https://doi.org/10.1117/12.947503
Event: 1985 Microlithography Conferences, 1985, Santa Clara, United States

Abstract

The technology for manufacturing boron nitride x-ray masks used with a palladium anode x-ray source is described. There are important relationships between LPCVD boron nitride process parameters and critical membrane properties. The LPCVD process variables affect the alignment wavelength transmittance, membrane tension, and tension uniformity, the latter properties having significant influence on mask flatness. Subtractive patterning of the gold x-ray absorber layer is easily accomplished using tantalum layers as etch stops. Additive patterning by electroplating is a promising technique for producing x-ray masks for submicron imaging.

Citation Download Citation

A. R. Shimkunas and S. A. Harrell "X-Ray Mask Technology", Proc. SPIE 0537, Electron-Beam, X-Ray, and Ion-Beam Techniques for Submicrometer Lithographies IV, (20 June 1985); https://doi.org/10.1117/12.947503

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