Mode structure of quantum dot semiconductor lasers

Yann Tanguy; Jan Muszalski; John Houlihan; Guillaume Huyet; Emma J. Pearce; Peter M Smowton; Mark Hopkinson

doi:10.1117/12.545473

1 September 2004 Mode structure of quantum dot semiconductor lasers

Yann Tanguy, Jan Muszalski, John Houlihan, Guillaume Huyet, Emma J. Pearce, Peter M Smowton, Mark Hopkinson

Proceedings Volume 5452, Semiconductor Lasers and Laser Dynamics; (2004) https://doi.org/10.1117/12.545473
Event: Photonics Europe, 2004, Strasbourg, France

Abstract

An analysis of the transverse and longitudinal mode structure of broad area quantum dot lasers emitting at 1060 nm is presented. In particular, temperature is shown to play an important role in the stabilisation of the transverse mode structure of the devices. In addition, the investigation of the interaction between these transverse modes, through the measurement of the spatial intensity correlation, shows that the laser retains some modal properties in the unstable regime. Finally, measurements of spectral correlations between longitudinal mode groups display a strong dependency on their respective transverse mode structures indicating the importance of spatial overlap.

Citation Download Citation

Yann Tanguy, Jan Muszalski, John Houlihan, Guillaume Huyet, Emma J. Pearce, Peter M Smowton, and Mark Hopkinson "Mode structure of quantum dot semiconductor lasers", Proc. SPIE 5452, Semiconductor Lasers and Laser Dynamics, (1 September 2004); https://doi.org/10.1117/12.545473

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