Self-seeded gain-switched operation of an InGaN MQW laser diode

Youfang Hu; Michael Dubov; Igor Khrushchev

doi:10.1117/12.545446

1 September 2004 Self-seeded gain-switched operation of an InGaN MQW laser diode

Youfang Hu, Michael Dubov, Igor Khrushchev

Author Affiliations +

Proceedings Volume 5452, Semiconductor Lasers and Laser Dynamics; (2004) https://doi.org/10.1117/12.545446
Event: Photonics Europe, 2004, Strasbourg, France

Abstract

Self-seeded, gain-switched operation of an InGaN multi-quantum-well laser diode has been demonstrated for the first time. An external cavity comprising Littrow geometry was implemented for spectral control of pulsed operation. The feedback was optimized by adjusting the external cavity length and the driving frequency of the laser. The generated pulses had a peak power in excess of 400mW, a pulse duration of 60ps, a spectral linewidth of 0.14nm and maximum side band suppression ratio of 20dB. It was tunable within the range of 3.6nm centered at a wavelength of 403nm.

Citation Download Citation

Youfang Hu, Michael Dubov, and Igor Khrushchev "Self-seeded gain-switched operation of an InGaN MQW laser diode", Proc. SPIE 5452, Semiconductor Lasers and Laser Dynamics, (1 September 2004); https://doi.org/10.1117/12.545446

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