Photoelectrochemical And Structural Behavior Of Manganese Oxide/N-Si Photoanodes

R. C. Kainthla; B. Zelenay; J. O'M. Bockris

doi:10.1117/12.966303

2 December 1985 Photoelectrochemical And Structural Behavior Of Manganese Oxide/N-Si Photoanodes

R. C. Kainthla, B. Zelenay, J. O'M. Bockris

Proceedings Volume 0562, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion IV; (1985) https://doi.org/10.1117/12.966303
Event: 29th Annual Technical Symposium, 1985, San Diego, United States

Abstract

N-silicon photoanodes have been protected against photocorrosion, for use in photo-assisted water electrolysis photoelectrochemical cells, by chemically depositing a thin film of manganese oxide on the surface. Current-potential characteristics of the electrodes have been measured in 0.5 M K₂SO₄ solution and in 0.2 M NaOH solutions. The onset potential for photocurrent in these electrolytes occur at + 1.1 V and + 0.56 V (vs NHE), respectively. The occurrence of photocurrent due to the photoevolution of oxygen was confirmed by pH dependence of onset potential and the appearance of gas bubbles on the electrode surface. When used in 0.5 M K₂SO₄ solution, at ~ 1.1 mA.cm^-2 photocurrent density, the electrode has shown complete stability, for continuous illumination of ~ 650 hours. The surface analysis of the electrode surface shows that manganese in the manganese oxide is present in + 3 state. The use of electrode for oxygen evolution in aqueous solution changes the Mn₂0₃ to MnO (OH) on the surface without affecting the bulk composition.

Citation Download Citation

R. C. Kainthla, B. Zelenay, and J. O'M. Bockris "Photoelectrochemical And Structural Behavior Of Manganese Oxide/N-Si Photoanodes", Proc. SPIE 0562, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion IV, (2 December 1985); https://doi.org/10.1117/12.966303

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