Applications of ICP in optoelectronic device fabrication

Yi Gan; Jun Zhang; Shan Jiang; Xiaodong Huang; Ning Zhou; Ligang Deng

doi:10.1117/12.575729

31 January 2005 Applications of ICP in optoelectronic device fabrication

Yi Gan, Jun Zhang, Shan Jiang, Xiaodong Huang, Ning Zhou, Ligang Deng

Proceedings Volume 5624, Semiconductor and Organic Optoelectronic Materials and Devices; (2005) https://doi.org/10.1117/12.575729
Event: Asia-Pacific Optical Communications, 2004, Beijing, China

Abstract

Three dry etching processes using a high ion density inductively coupled plasma (ICP) system in fabrication of optoelectronic device have been briefly presented in this paper. Smooth etched surface, high rate and selectivity ICP InP etching using Cl₂/CH₄/N₂ have been demonstrated first time in fabrications of semiconductor laser. Low damage CH₄/H₂ ICP InP sub-micron grating etching using SiN_x mask can be used for SG-DBR tunable laser fabrication. Anisotropic Cl₂/CH₄/Ar ICP etching with vertical profile has been used for GaAs/AlGaAs DBR layers etching in vertical cavity surface emitting laser (VCSEL) fabrication. The etching characteristics have been investigated by conventional optical microscopy and scanning electron microscopy (SEM).

Citation Download Citation

Yi Gan, Jun Zhang, Shan Jiang, Xiaodong Huang, Ning Zhou, and Ligang Deng "Applications of ICP in optoelectronic device fabrication", Proc. SPIE 5624, Semiconductor and Organic Optoelectronic Materials and Devices, (31 January 2005); https://doi.org/10.1117/12.575729

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