Low-leakage In0.53Ga0.47As p-i-n photodetector fabricated on GaAs substrate with linearly graded metamorphic InxGa1-xP buffer

Chi-Kuan Lin; Hao-Chung Kuo; Yu-Sheng Liao; Gong-Ru Lin

doi:10.1117/12.577048

31 January 2005 Low-leakage In_0.53Ga_0.47As p-i-n photodetector fabricated on GaAs substrate with linearly graded metamorphic In_xGa_1-xP buffer

Chi-Kuan Lin, Hao-Chung Kuo, Yu-Sheng Liao, Gong-Ru Lin

Author Affiliations +

Proceedings Volume 5624, Semiconductor and Organic Optoelectronic Materials and Devices; (2005) https://doi.org/10.1117/12.577048
Event: Asia-Pacific Optical Communications, 2004, Beijing, China

Abstract

A novel top-illuminated metamorphic In_0.53Ga_0.47As p-i-n photodiodes (MM-PINPD) grown on GaAs substrate by using a linearly graded In_xGa_1-xP (x graded from 0.51 to 1) buffer layer is reported. The dark current, optical responsivities, noise equivalent power (NEP), and operational bandwidth of the MM-PINPD with aperture diameter of 60 μm are 13 pA, 0.77/0.59 (1310/1550 nm) A/W, 6.9x10^-11 W/Hz^1/2, and 7.5 GHz, respectively. The performances of the MM-PINPD on GaAs are demonstrated to be better than those of a similar device made on InGaAs/InP substrate.

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Chi-Kuan Lin, Hao-Chung Kuo, Yu-Sheng Liao, and Gong-Ru Lin "Low-leakage In_0.53Ga_0.47As p-i-n photodetector fabricated on GaAs substrate with linearly graded metamorphic In_xGa_1-xP buffer", Proc. SPIE 5624, Semiconductor and Organic Optoelectronic Materials and Devices, (31 January 2005); https://doi.org/10.1117/12.577048

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