Theoretical and experimental investigation on carrier recovery time in semiconductor optical amplifier

Jiang Zhong; Xinliang Zhang; Deming Liu; Dexiu Huang

doi:10.1117/12.570686

31 January 2005 Theoretical and experimental investigation on carrier recovery time in semiconductor optical amplifier

Jiang Zhong, Xinliang Zhang, Deming Liu, Dexiu Huang

Proceedings Volume 5624, Semiconductor and Organic Optoelectronic Materials and Devices; (2005) https://doi.org/10.1117/12.570686
Event: Asia-Pacific Optical Communications, 2004, Beijing, China

Abstract

A relatively perfect steady-state and dynamic numerical model of SOA considering facet reflectivity, gain dispersion and amplified spontaneous emission (ASE) spectrum is established to make it closer to reality. Based on the proposed numerical model, carrier recovery time is investigated under different external conditions theoretically and experimentally. Via the analysis of results of simulation and experiments, schemes for accelerating carrier recovery are explored.

Citation Download Citation

Jiang Zhong, Xinliang Zhang, Deming Liu, and Dexiu Huang "Theoretical and experimental investigation on carrier recovery time in semiconductor optical amplifier", Proc. SPIE 5624, Semiconductor and Organic Optoelectronic Materials and Devices, (31 January 2005); https://doi.org/10.1117/12.570686

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