Reflectivity of HgCdTe and PbS during laser annealing

Jinjing Feng; Song Li; Jixiang Yan; Shouhuan Zhou

doi:10.1117/12.574640

13 January 2005 Reflectivity of HgCdTe and PbS during laser annealing

Jinjing Feng, Song Li, Jixiang Yan, Shouhuan Zhou

Author Affiliations +

Proceedings Volume 5629, Lasers in Material Processing and Manufacturing II; (2005) https://doi.org/10.1117/12.574640
Event: Photonics Asia, 2004, Beijing, China

Abstract

The samples of semiconductor’s surface temperature increased abruptly, when illuminated by laser pulse. The sample’s surface melted and remained liquid phase for a few hundreds ns. That caused reflectivity enhancement of the sample surface. In this article, numerical calculation was carried out on HgCdTe and PbS. And a 1mm-thick HgCdTe was used as the sample in the experiments. In the experiments, the sample was illuminated by laser pulse of 60ns duration from a Q-switched Nd:YAG laser. A beam from He-Ne laser was used as the monitor beam to illustrated the reflectivity changes of the sample. The results of the experiments were the conclusive evidences of our numerical calculation of the dynamic behavior in the sample.

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Jinjing Feng, Song Li, Jixiang Yan, and Shouhuan Zhou "Reflectivity of HgCdTe and PbS during laser annealing", Proc. SPIE 5629, Lasers in Material Processing and Manufacturing II, (13 January 2005); https://doi.org/10.1117/12.574640

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