Paper
28 April 2005 Pressure tuning of GaInNAs laser diodes in external cavity
A. Bercha, F. Dybala, K. Komorowska, P. Adamiec, R. Bohdan, W. Trzeciakowski, J. A. Gupta, P. J. Barrios, G. J. Pakulski, A. Delage, Z. R. Wasilewski
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Abstract
High hydrostatic pressure can be used for wavelength tuning of semiconductor laser diodes in a wide spectral range. Coupling the laser with external grating leads to wavelength tuning within the gain spectrum (i.e. in a narrower range than with pressure) but allows for a narrow emission line and nearly continuous tuning (mode-hop free if anti-reflecting coating is applied). Here we demonstrate a combination of pressure and external-resonator tuning for the GaInNAs laser emitting at 1343 nm at ambient conditions. Using the specially designed liquid pressure cell working up to 20 kbar we shift the emission down to 1170 nm while the external grating (used in Littrow configuration) allows for fine tuning in the ~10 nm range (at each pressure).
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. Bercha, F. Dybala, K. Komorowska, P. Adamiec, R. Bohdan, W. Trzeciakowski, J. A. Gupta, P. J. Barrios, G. J. Pakulski, A. Delage, and Z. R. Wasilewski "Pressure tuning of GaInNAs laser diodes in external cavity", Proc. SPIE 5722, Physics and Simulation of Optoelectronic Devices XIII, (28 April 2005); https://doi.org/10.1117/12.611325
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CITATIONS
Cited by 6 scholarly publications.
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KEYWORDS
Semiconductor lasers

Gallium arsenide

Mirrors

Liquids

Gallium

Wavelength tuning

Aluminum

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